Highly efficient back-junction PEDOT:PSS/n-Si hybrid solar cell with omnidirectional antireflection structures

Abstract

Hybrid planar solar cells based on bulk n-doped Si wafers and poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) with a back-junction geometry demonstrated an excellent power conversion efficiency of more than 11%. When a random pyramid or a Si nanowire antireflection structure was incorporated into the front of the cell surface, the power conversion efficiencies were further enhanced to 13.9% or 14.5%, respectively. Moreover, the cells with the Si nanowire antireflection structure displayed omnidirectional light-trapping characteristics over the random pyramid structures. These cells also maintained a constant power conversion efficiency even at an incident angle of 60 degrees.