標題: Absorption enhancement in type-II coupled quantum rings due to existence of quasi-bound states
作者: Hsieh, Chi-Ti
Lin, Shih-Yen
Chang, Shu-Wei
光電工程學系
Department of Photonics
關鍵字: Absorption;type-II quantum ring;quasi-bound state;tunneling
公開日期: 1-一月-2018
摘要: The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially separated electrons and holes. We model the bound-to-continuum absorption of type-II quantum rings (QRs) using a multiband source-radiation approach using the retarded Green function in the cylindrical coordinate system. The selection rules due to the circular symmetry for allowed transitions of absorption are utilized. The bound-to continuum absorptions of type-II GaSb coupled and uncoupled QRs embedded in GaAs matrix are compared here. The GaSb QRs act as energy barriers for electrons but potential wells for holes. For the coupled QR structure, the region sandwiched between two QRs forms a potential reservoir of quasi-bound electrons. Electrons in these states, though look like bound ones, would ultimately tunnel out of the reservoir through barriers. Multiband perfectly-matched layers are introduced to model the tunneling of quasi-bound states into open space. Resonance peaks are observed on the absorption spectra of type-II coupled QRs due to the formation of quasi-bound states in conduction bands, but no resonance exist in the uncoupled QR. The tunneling time of these metastable states can be extracted from the resonance and is in the order of ten femtoseconds. Absorption of coupled QRs is significantly enhanced as compared to that of uncoupled ones in certain spectral windows of interest. These features may improve the performance of photon detectors and photovoltaic devices based on type-II semiconductor nanostructures.
URI: http://dx.doi.org/10.1117/12.2287748
http://hdl.handle.net/11536/146156
ISSN: 0277-786X
DOI: 10.1117/12.2287748
期刊: PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVI
Volume: 10526
顯示於類別:會議論文