High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device

Abstract

The bipolar resistive switching properties of the CBRAM device are investigated for nonvolatile memory applications in a SiO2/ZrO2/SiO2 structure. The device shows good switching characteristics with set/reset voltages less than +1 V/-1 V with a variation of less than 0.2 V. The SiO2/ZrO2/SiO2 tri-layer CBRAM device exhibits excellent memory performances, such as stable DC endurance up to 10(3) cycles during the test without degradation, good retention ability (>10(4) s) at a temperature of 100 degrees C with more than 10(2) on/off resistance ratio.