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dc.contributor.authorBorland, Johnen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorChuang, Shang-Shiunen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorLiu, Chee-Weeen_US
dc.contributor.authorHuet, Karimen_US
dc.contributor.authorGoodman, Garyen_US
dc.contributor.authorMarino, Johnen_US
dc.date.accessioned2018-08-21T05:57:09Z-
dc.date.available2018-08-21T05:57:09Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/147126-
dc.language.isoen_USen_US
dc.titleSolid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistanceen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)en_US
dc.citation.spage94en_US
dc.citation.epage97en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000427060000029en_US
Appears in Collections:Conferences Paper


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