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dc.contributor.authorYeh, Sheng-Shiuanen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2019-04-03T06:42:35Z-
dc.date.available2019-04-03T06:42:35Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.79.012411en_US
dc.identifier.urihttp://hdl.handle.net/11536/149739-
dc.description.abstractWe have measured the differential conductances G(V, T) in several Al/AlOx/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to similar to 16 K, the zero-bias conductance G(0, T) crosses over from a standard -ln T dependence to a novel -root T dependence. Correspondingly, the finite bias conductance G(V, T) reveals a two-channel Kondo scaling behavior between similar to 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-1/2 Sc atoms situated slightly inside the AlOx/Sc interface.en_US
dc.language.isoen_USen_US
dc.titleTwo-channel Kondo effects in Al/AlOx/Sc planar tunnel junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.79.012411en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume79en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000262977900017en_US
dc.citation.woscount9en_US
Appears in Collections:Articles


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