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dc.contributor.authorWu, Chia-Haoen_US
dc.contributor.authorLee, Ten-Minen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.contributor.authorChao, Tieng-Shengen_US
dc.date.accessioned2019-04-02T05:59:40Z-
dc.date.available2019-04-02T05:59:40Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C133en_US
dc.identifier.urihttp://hdl.handle.net/11536/149775-
dc.description.abstractWe demonstrated a successful strategy for combining the straightforward scanning probe chemical bond-breaking lithography and self-assembly monolayer (SAM) techniques for constructing nanoscale architectural structures of gold nanoparticles (AuNPs) onto modified SiO2 surfaces. The hydroxyl-terminated surface of the sample substrate was modified by silanization with N-(2-aminoethyl)-3-aminopropyl-trimethoxysilane (AEAPTMS) molecules. Local-field-induced scanning probe bond-breaking lithography is adopted to selectively decompose the chemical bonds of AEAPTMS SAMs on aminosilane-modified SiO2 surfaces. From the experiments, a tip bias of less than 4.5 V cannot effectively decompose chemical bonds of AEAPTMS SAMs. Gray-level selectively patterned pictures were successfully observed on a modified 2.5-nm-thick SiO2 surface by applying dc voltage (2.5-5.5V) between the atomic force microscopy (AFM) conductive tip and the SiO2 surface under ambient conditions. After the scanning probe selective decomposition of AEAPTMS SAMs, AuNPs with negative-charged citrate surfaces were selectively anchored in the selective patterning region via Coulomb electrostatic force. With proper control, it is considered that this novel technique can be applicable to the generation of various nanofabricated devices. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleNovel Field-Induced Gray-Level Selective Patterning of Self-Assembled Aminosilane Monolayer on SiO2 Surfaces by Scanning Probe Bond-Breaking Lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.48.04C133en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000265652700134en_US
dc.citation.woscount2en_US
Appears in Collections:Articles