Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tseng, Yuan-Chieh | en_US |
dc.contributor.author | Ma, Hao-Jhong | en_US |
dc.contributor.author | Yang, Chao-Yao | en_US |
dc.contributor.author | Mudryk, Yaroslav | en_US |
dc.contributor.author | Pecharsky, Vitalij K. | en_US |
dc.contributor.author | Gschneidner, Karl A., Jr. | en_US |
dc.contributor.author | Souza-Neto, Narcizo M. | en_US |
dc.contributor.author | Haskel, Daniel | en_US |
dc.date.accessioned | 2019-04-03T06:36:41Z | - |
dc.date.available | 2019-04-03T06:36:41Z | - |
dc.date.issued | 2011-03-28 | en_US |
dc.identifier.issn | 1098-0121 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.83.104419 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150266 | - |
dc.description.abstract | The composition-and pressure-dependent magnetostructural properties of Tb-5(SixGe1-x)(4) (x = 0.4, 0.485, 0.625, and 0.7) were investigated using x-ray powder diffraction and x-ray magnetic circular dichroism in a diamond anvil cell, respectively. Substituting the smaller-size Si for Ge stabilizes a single-phase, ferromagnetic (FM) orthorhombic O(I) structure for x >= 0.7. Similarly, application of external pressure causes a canted antiferromagnetic orthorhombic O(II) sample (x=0.4) to transform into an FMO(I) phase at 4 GPa. The element- and orbital-specific x-ray absorption data indicate that the Tb 4f orbital occupation changes with external pressure, likely through 4f-5d electronic mixing, yet no changes in Tb 4f electronic structure are observed with Si doping. The results point to different mechanisms behind the enhancement of FM exchange interactions in Tb-5(SixGe1-x)(4) with chemical and applied pressure, respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of Si doping and applied pressure upon magnetostructural properties of Tb-5(SixGe1-x)(4) magnetocaloric compounds | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.83.104419 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 83 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000288854700003 | en_US |
dc.citation.woscount | 4 | en_US |
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