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dc.contributor.authorTseng, Yuan-Chiehen_US
dc.contributor.authorMa, Hao-Jhongen_US
dc.contributor.authorYang, Chao-Yaoen_US
dc.contributor.authorMudryk, Yaroslaven_US
dc.contributor.authorPecharsky, Vitalij K.en_US
dc.contributor.authorGschneidner, Karl A., Jr.en_US
dc.contributor.authorSouza-Neto, Narcizo M.en_US
dc.contributor.authorHaskel, Danielen_US
dc.date.accessioned2019-04-03T06:36:41Z-
dc.date.available2019-04-03T06:36:41Z-
dc.date.issued2011-03-28en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.83.104419en_US
dc.identifier.urihttp://hdl.handle.net/11536/150266-
dc.description.abstractThe composition-and pressure-dependent magnetostructural properties of Tb-5(SixGe1-x)(4) (x = 0.4, 0.485, 0.625, and 0.7) were investigated using x-ray powder diffraction and x-ray magnetic circular dichroism in a diamond anvil cell, respectively. Substituting the smaller-size Si for Ge stabilizes a single-phase, ferromagnetic (FM) orthorhombic O(I) structure for x >= 0.7. Similarly, application of external pressure causes a canted antiferromagnetic orthorhombic O(II) sample (x=0.4) to transform into an FMO(I) phase at 4 GPa. The element- and orbital-specific x-ray absorption data indicate that the Tb 4f orbital occupation changes with external pressure, likely through 4f-5d electronic mixing, yet no changes in Tb 4f electronic structure are observed with Si doping. The results point to different mechanisms behind the enhancement of FM exchange interactions in Tb-5(SixGe1-x)(4) with chemical and applied pressure, respectively.en_US
dc.language.isoen_USen_US
dc.titleEffect of Si doping and applied pressure upon magnetostructural properties of Tb-5(SixGe1-x)(4) magnetocaloric compoundsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.83.104419en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume83en_US
dc.citation.issue10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000288854700003en_US
dc.citation.woscount4en_US
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