標題: Reactions between Si melt and various ceramics
作者: Lin, Che-Yu
Lin, Kun-Lin
Lin, Chien-Cheng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: ceramic crucible;silicon;interface;Si dissolution couple;crystal growth
公開日期: 1-一月-2019
摘要: Reactions between different kinds of ceramics and silicon were studied to evaluate ceramics as candidates for their use in the process of silicon-crystal growth. Three types of ceramic plates, Al2O3, ZrO2 and quartz (SiO2), were put into contact with a silicon wafer via annealing at 1450 degrees C for 30 min under an Ar atmosphere. Defects appeared at the Si-ceramics interface. Among these, a crack and a dislocation pile up were found at the Si-SiO2 dissolution couple. In addition, two intermetallic compounds, Y2Si2O7 and Zr-Si, produced by the diffusion of Y, O and Zr from the ZrO2 into the Si, were found at the Si-ZrO2 dissolution couple. At the interface of the Si-Al2O3 dissolution couple, no intermetallic compounds and few defects were found. The oxygen concentration and electrical resistivity near the interface were high and gradually decreased away from the interface for all Si-ceramics dissolution couples.
URI: http://dx.doi.org/10.2298/PAC1902115L
http://hdl.handle.net/11536/152669
ISSN: 1820-6131
DOI: 10.2298/PAC1902115L
期刊: PROCESSING AND APPLICATION OF CERAMICS
Volume: 13
Issue: 2
起始頁: 115
結束頁: 123
顯示於類別:期刊論文