Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL

Shih, Hsiang-Yun; Cho, Yu-Yun; Hsu, Shun-Chieh; Huang, Yu-Ming; Wang, Shou-Wei; Huang, Huang-Hsiung; Wu, Chao-Hsin; Yeh, Yen-Wei; Lu, Yun-Ting; Kuo, Hao-Chung; Lin, Chien-Chung

Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL

Date

2019-01-01

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Abstract

An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.

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Quantum-well , -wire and -dot devices , Bragg reflector , Laser , fiber

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https://ir.lib.nycu.edu.tw/handle/11536/154009

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會議論文;;Conferences Paper

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Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL

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