Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate
Loading...
Date
Journal Title
Journal ISSN
Volume Title
Publisher
DOI
Abstract
The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20% higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.