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dc.contributor.authorHsieh, Cheng-Yuen_US
dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorCho, Hsin-Juen_US
dc.contributor.authorWang, Bau-Mingen_US
dc.contributor.authorChang, Nancyen_US
dc.contributor.authorWu, Yew-Chung Sermonen_US
dc.date.accessioned2014-12-08T15:28:25Z-
dc.date.available2014-12-08T15:28:25Z-
dc.date.issued2012-12-15en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2012.2224855en_US
dc.identifier.urihttp://hdl.handle.net/11536/20579-
dc.description.abstractA relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.en_US
dc.language.isoen_USen_US
dc.subjectLight-emitting diode (LED)en_US
dc.subjectnano patternen_US
dc.subjectsapphireen_US
dc.titleImprovement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2012.2224855en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue24en_US
dc.citation.spage2232en_US
dc.citation.epage2234en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000311845900009-
dc.citation.woscount6-
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