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dc.contributor.authorLai, Ying-Yuen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorHuang, Si-Weien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:30:07Z-
dc.date.available2014-12-08T15:30:07Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-0828-2en_US
dc.identifier.issn2326-5442en_US
dc.identifier.urihttp://hdl.handle.net/11536/21590-
dc.description.abstractWe report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.en_US
dc.language.isoen_USen_US
dc.titlePolariton Lasing in a ZnO-based Microcavity up to 353Ken_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)en_US
dc.citation.spage143en_US
dc.citation.epage144en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000316820100072-
Appears in Collections:Conferences Paper


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