Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Yung-Huang | en_US |
dc.contributor.author | Liu, Chien-Min | en_US |
dc.contributor.author | Cheng, Hsyi-En | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2014-12-08T15:31:32Z | - |
dc.date.available | 2014-12-08T15:31:32Z | - |
dc.date.issued | 2013-05-08 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/am302219n | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22363 | - |
dc.description.abstract | 2-Dimensional (2-D) TiO2 thin films and 1-dimensional (1-D) TiO2 nanotube arrays were fabricated on Si and quartz substrates using atomic layer deposition (ALD) with an anodic aluminum oxide (AAO) template at 400 degrees C. The film thickness and the tube wall thickness can be precisely controlled using the ALD approach. The intensities of the absorption spectra were enhanced by an increase in the thickness of the TiO2 thin film and tube walls. A blue-shift was observed for a decrease in the 1-D and 2-D TiO2 nanostructure thicknesses, indicating a change in the energy band gap with the change in the size of the TiO2 nanostructures. Indirect and direct interband transitions were used to investigate the change in the energy band gap. The results indicate that both quantum confinement and interband transitions should be considered when the sizes of 1-D and 2-D TiO2 nanostructures are less than 10 nm. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 2-D TiO2 thin films | en_US |
dc.subject | 1-D TiO2 nanotube arrays | en_US |
dc.subject | quantum confinement | en_US |
dc.subject | interband transitions | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | anodic aluminum oxide | en_US |
dc.title | Effect of Geometric Nanostructures on the Absorption Edges of 1-D and 2-D TiO2 Fabricated by Atomic Layer Deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/am302219n | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 3549 | en_US |
dc.citation.epage | 3555 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000318839100010 | - |
dc.citation.woscount | 3 | - |
Appears in Collections: | Articles |
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