Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Huang, Yi-Jui | en_US |
dc.contributor.author | Liao, Chen-Hong | en_US |
dc.contributor.author | Huang, Bo-Han | en_US |
dc.contributor.author | Chen, Wan-Ying | en_US |
dc.contributor.author | Wu, Pu-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:37:57Z | - |
dc.date.available | 2014-12-08T15:37:57Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26069 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3552604 | en_US |
dc.description.abstract | We demonstrate a facile fabrication scheme to construct large-area ZnO inverse opals on an indium-tin-oxide substrate with significantly reduced defects and improved stoichiometry. The fabrication steps involve the preparation of colloidal template via vertical electrophoresis of polystyrene (PS) microspheres in 720 nm radius, followed by galvanostatic electrodeposition of ZnO in the interstitial voids among the PS microspheres. Subsequently, the sample undergoes a heat-treatment in air at 500 degrees C for different time to remove the colloidal template, leaving an integral ZnO skeleton with thickness adjusted by the electrodeposition time. Since the colloidal template is deliberately designed with desirable thickness and considerable uniformity, the electroplating of ZnO can be achieved in a reduced ethanol/water ratio that allows faster growth rate and improved ZnO structure. Scanning electron microscope images demonstrate negligible microstructural defects for the ZnO inverse opals. X-ray diffraction reveals a wurtzite hexagonal lattice with (002) preferred orientation. In addition, both X-ray photoelectron spectroscopy and photoluminescence spectra suggest improved crystallinity and stoichiometry with increasing heat-treatment time. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3552604] All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Facile Electrochemical Fabrication of Large-Area ZnO Inverse Opals with Reduced Defects | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3552604 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 158 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | P45 | en_US |
dc.citation.epage | P49 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000287972300077 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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