High performance CPW and microstrip ring resonators on silicon substrates

Abstract

High performance CPW and novel microstrip ring resonators at similar to30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton-implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electromagnetic simulations, were measured. In contrast, the ring resonators on VLSI-standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits. (C) 2004 Wiley Periodicals, Inc.