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dc.contributor.authorLee, CCen_US
dc.contributor.authorShih, CFen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorTu, RCen_US
dc.contributor.authorChuo, CCen_US
dc.contributor.authorChi, Jen_US
dc.date.accessioned2014-12-08T15:39:01Z-
dc.date.available2014-12-08T15:39:01Z-
dc.date.issued2004-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.L740en_US
dc.identifier.urihttp://hdl.handle.net/11536/26706-
dc.description.abstractIn this article, a comparison on the temperature dependence of the electron transport properties of the undoped and modulation-doped AlGaN/GaN heterostructures is presented. The results obtained indicate that the device structure plays an important role in the temperature-dependent transport behavior of the devices. The undoped structure has a nearly constant 2DEG concentration over a wide temperature range. The modulation-doped structure has a temperature-dependent electron concentration. The increase in electron concentration in the modulation-doped structure at high temperatures is due to the thermal activation of Si donors in the AlGaN layer. In addition, the modulation-doped structure shows comparable electron mobility with the undoped structure at high temperatures, indicating that the modulation-doped structure would exhibit a better device performance at high temperatures.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjecttransport propertyen_US
dc.subjectheterostructureen_US
dc.subjectmodulation-dopeden_US
dc.subjectthermal activationen_US
dc.titleTemperature-dependent electron transport properties of AlGaN/GaN heterostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.L740en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume43en_US
dc.citation.issue6Aen_US
dc.citation.spageL740en_US
dc.citation.epageL742en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000222116500015-
dc.citation.woscount1-
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