標題: | Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process |
作者: | Chan, KT Chin, A Lin, YD Chang, CY Zhu, CX Li, MF Kwong, DL McAlister, S Duh, DS Lin, WJ 電子工程學系及電子研究所 電信工程研究所 Department of Electronics Engineering and Institute of Electronics Institute of Communications Engineering |
關鍵字: | antenna;implantation;loss;RF;transmission line |
公開日期: | 1-十一月-2003 |
摘要: | We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of similar to 4 MeV with a depth of similar to 175 mum. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved. |
URI: | http://dx.doi.org/10.1109/LMWC.2003.817146 http://hdl.handle.net/11536/27427 |
ISSN: | 1531-1309 |
DOI: | 10.1109/LMWC.2003.817146 |
期刊: | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS |
Volume: | 13 |
Issue: | 11 |
起始頁: | 487 |
結束頁: | 489 |
顯示於類別: | 期刊論文 |