Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells

doi:10.1016/S0026-2692(03)00093-4

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DC Field	Value	Language
dc.contributor.author	Lee, HC	en_US
dc.contributor.author	Sun, KW	en_US
dc.date.accessioned	2014-12-08T15:40:57Z	-
dc.date.available	2014-12-08T15:40:57Z	-
dc.date.issued	2003-05-01	en_US
dc.identifier.issn	0026-2692	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0026-2692(03)00093-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27904	-
dc.description.abstract	In this presentation, we report the calculated results on hot electron relaxation through inter- and intra-subband scatterings with LO phonons in quantum well structures. The scattering rates were calculated for electrons excited both in the gamma valley and L valleys. The types of optical phonons adapted in our model are determined based on the dielectric continuum model. We have also studied the dependence of the scatterings on the structure parameters of the quantum well. (C) 2003 Elsevier Science Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	inter-subband	en_US
dc.subject	quantum wells	en_US
dc.subject	phonons	en_US
dc.title	Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0026-2692(03)00093-4	en_US
dc.identifier.journal	MICROELECTRONICS JOURNAL	en_US
dc.citation.volume	34	en_US
dc.citation.issue	5-8	en_US
dc.citation.spage	671	en_US
dc.citation.epage	673	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000183607400083	-
Appears in Collections:	Conferences Paper

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