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dc.contributor.authorKwei, CMen_US
dc.contributor.authorTsai, SSen_US
dc.contributor.authorTung, CJen_US
dc.date.accessioned2014-12-08T15:44:12Z-
dc.date.available2014-12-08T15:44:12Z-
dc.date.issued2001-02-10en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0039-6028(00)00953-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/29852-
dc.description.abstractMonte Carlo calculations have been performed of the angular distribution of electrons elastically backscattered from amorphous overlayer systems composed of thin copper films and semi-infinite silicon substrates. These calculations showed that the angular distribution of the elastically reflected intensity was dependent on film thickness and electron energy. They also showed that elastically backscattered electrons were due substantially to one, two and three scatterings with single-scattering events contributing about half of the intensity. Based on these findings, we have derived a formula for the contribution from single-scattering events to the angular distribution of the elastically reflected intensity. Combining this formula and the Pi-approximation for multiple scattering, we were able to construct an analytic formula for the angular distribution of electrons elastically backscattered from overlayer systems. Results from this approach were in good agreement with those computed using Monte Carlo simulations. (C) 2001 Elsevier Science B.V, All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectelectron-solid interactionsen_US
dc.subjectscatteringen_US
dc.subjectdiffractionen_US
dc.subjectMonte Carlo simulationsen_US
dc.subjectsemi-empirical models and model calculationsen_US
dc.subjectcopperen_US
dc.subjectsiliconen_US
dc.subjectmetal-semiconductor interfacesen_US
dc.titleAngular distribution of electrons elastically backscattered from amorphous overlayer systemsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0039-6028(00)00953-5en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume473en_US
dc.citation.issue1-2en_US
dc.citation.spage50en_US
dc.citation.epage58en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000167083400006-
dc.citation.woscount11-
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