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dc.contributor.authorYang, CSen_US
dc.contributor.authorRo, CSen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorLin, CMen_US
dc.contributor.authorChuu, DSen_US
dc.contributor.authorHu, Jen_US
dc.contributor.authorHuang, Een_US
dc.contributor.authorXu, Jen_US
dc.date.accessioned2014-12-08T15:46:28Z-
dc.date.available2014-12-08T15:46:28Z-
dc.date.issued1999-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/31278-
dc.description.abstractEnergy-dispersive x-ray diffraction experiments were carried out to investigate the structure of phase transitions under high pressure. It was found that the zinc blende (B-3) to rock salt (B-1) phase transition pressures of Zn0.93Mn0.07Se and Zn0.76Mn0.24Se bulk crystals are found 11.8+/-1.5 and 9.9+/-0.5 GPa, respectively. The respective bulk moduli are 61.8+/-0.8 and 60.5+/-0.8 GPa. The pressure-induced zinc blende (ZB) to rock salt (RS) structure phase transition is interpreted as a signature of the semiconductor to metal transition for Zn1-xMnxSe. The above interpretation is further corroborated by the observation of the disappearance of the longitudinal optical phonon at the pressure where the ZB to RS structure transition occurs. (C) 1999 American Institute of Physics. [S0021-8979(99)05312-8].en_US
dc.language.isoen_USen_US
dc.titleEnergy-dispersive x-ray diffraction and Raman scattering of Zn1-xMnxSe bulk crystals at high pressureen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume85en_US
dc.citation.issue12en_US
dc.citation.spage8092en_US
dc.citation.epage8096en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000080517000012-
dc.citation.woscount7-
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