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dc.contributor.authorWang, Te-Chungen_US
dc.contributor.authorKo, Tsung-Shineen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorGao, Run-Cien_US
dc.contributor.authorTsay, Jenq-Daren_US
dc.contributor.authorWang, Sing-Chungen_US
dc.date.accessioned2014-12-08T15:49:01Z-
dc.date.available2014-12-08T15:49:01Z-
dc.date.issued2008en_US
dc.identifier.issn1610-1634en_US
dc.identifier.urihttp://hdl.handle.net/11536/32586-
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.200778503en_US
dc.description.abstractWe had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium, compositions, we concluded that without piezoelectric field, high indium. content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium. composition about 30% so that the photoluminescence intensity of the sample 810 degrees C low down and spectrum bandwidth broaden.en_US
dc.language.isoen_USen_US
dc.titleInternal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositionsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1002/pssc.200778503en_US
dc.identifier.journalPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6en_US
dc.citation.volume5en_US
dc.citation.issue6en_US
dc.citation.spage2161en_US
dc.citation.epage2163en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256695700210-
Appears in Collections:Conferences Paper


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