Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Te-Chung | en_US |
dc.contributor.author | Ko, Tsung-Shine | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Gao, Run-Ci | en_US |
dc.contributor.author | Tsay, Jenq-Dar | en_US |
dc.contributor.author | Wang, Sing-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:49:01Z | - |
dc.date.available | 2014-12-08T15:49:01Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.issn | 1610-1634 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32586 | - |
dc.identifier.uri | http://dx.doi.org/10.1002/pssc.200778503 | en_US |
dc.description.abstract | We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium, compositions, we concluded that without piezoelectric field, high indium. content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium. composition about 30% so that the photoluminescence intensity of the sample 810 degrees C low down and spectrum bandwidth broaden. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1002/pssc.200778503 | en_US |
dc.identifier.journal | PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 2161 | en_US |
dc.citation.epage | 2163 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000256695700210 | - |
Appears in Collections: | Conferences Paper |
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