標題: Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO(2) film on a flexible polyimide substrate
作者: Meen, Jagan Singh
Chu, Min-Ching
Kuo, Shiao-Wei
Chang, Feng-Chih
Ko, Fu-Hsiang
材料科學與工程學系奈米科技碩博班
應用化學系
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Applied Chemistry
公開日期: 1-Jan-2010
摘要: We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO2 film was investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free film growth had occurred on the film surface. After oxygen (O(2)) plasma pretreatment and subsequent annealing at 250 degrees C, the film on the PI substrate exhibited a low leakage current density of 3.64 x 10(-9) A cm(-2) at 5 V and a maximum capacitance density of 10.35 fF mu m(-2) at 1 MHz. The as-deposited sol-gel film was completely oxidized when employing O2 plasma at a relatively low temperature (ca. 250 degrees C), thereby enhancing the electrical performance. We employed X-ray photoelectron spectroscopy (XPS) at both high and low resolution to examine the chemical composition of the film subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy, revealed that O(2) plasma treatment was the most effective process for the complete oxidation of hafnium atoms at low temperature. A study of the insulator properties indicated the excellent bendability of our MIM capacitor; the flexible PI substrate could be bent up to 10(5) times and folded to near 360 degrees without any deterioration in its electrical performance.
URI: http://dx.doi.org/10.1039/b917604g
http://hdl.handle.net/11536/6229
ISSN: 1463-9076
DOI: 10.1039/b917604g
期刊: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume: 12
Issue: 11
起始頁: 2582
結束頁: 2589
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