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dc.contributor.author廖珮君en_US
dc.contributor.authorLiao, Pei-Junen_US
dc.contributor.author褚德三en_US
dc.contributor.authorChu, De-Sanen_US
dc.date.accessioned2014-12-12T02:19:46Z-
dc.date.available2014-12-12T02:19:46Z-
dc.date.issued1997en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT864429001en_US
dc.identifier.urihttp://hdl.handle.net/11536/63638-
dc.description.abstract本文是藉由摻入不同錳原子濃度的硒化錳鋅薄膜,利用拉曼光譜研究其 在高壓下聲子振動模式改變之行為.我們利用鑽石高壓砧的技術產生高壓 至20GPa. 實驗中發現,當壓力分別增加至11.7GPa(Mn=7%).10.9GPa( Mn=16%).和13.6GPa(Mn=28%) 時產生半導體-金屬結構變化.而在金屬相 變之前,TO模分裂一次產生新的相變,其壓力分別為1.9GPa(Mn=7%).2.4 GPa(Mn=16%)和4.8GPa(Mn=28%).除了TO分裂模隨著壓力呈現紅位移外,LO. TO及Mn local 模皆呈現藍位移的趨勢,在金屬化相變後LO及Mn local 模 完全消失,然而TO及TO分裂模仍然可藉由光譜觀測到.隨著錳原子濃度增 加,金屬化相變的壓力會隨之提早,然而對於高濃度(Mn=28%)金屬化相變之 值則有待其它實驗佐證.zh_TW
dc.language.isoen_USen_US
dc.subject硒化錳鋅薄膜zh_TW
dc.subject半導體-金屬zh_TW
dc.subject金屬化相變zh_TW
dc.subjectＺｎ1-xＭｎxＳｅzh_TW
dc.subject高壓zh_TW
dc.subject二六族半導體薄膜zh_TW
dc.subject高壓拉曼zh_TW
dc.subject電子物理zh_TW
dc.subject電子工程zh_TW
dc.subjectSemiconductor-metalen_US
dc.subjectMetallizationen_US
dc.subjectHigh-pressureen_US
dc.subjectZnMnSeen_US
dc.subjectII-VI semiconductor thin filmen_US
dc.subjectHigh-pressure Ramanen_US
dc.subjectELECTROPHYSICSen_US
dc.subjectELECTRONIC-ENGINEERINGen_US
dc.title硒化錳鋅薄膜高壓相變之研究zh_TW
dc.titleHigh pressure induced phase transition of Zn1-xMnxSe thin film.en_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
Appears in Collections:Thesis


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