Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, Chia-Hungen_US
dc.contributor.authorUen, Wu-Yihen_US
dc.contributor.authorHuang, Yen-Chinen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorLiao, Sen-Maoen_US
dc.contributor.authorYang, Tsun-Nengen_US
dc.contributor.authorLan, Shan-Mingen_US
dc.contributor.authorHuang, Yu-Hsiangen_US
dc.date.accessioned2014-12-08T15:11:27Z-
dc.date.available2014-12-08T15:11:27Z-
dc.date.issued2008-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.4696en_US
dc.identifier.urihttp://hdl.handle.net/11536/8793-
dc.description.abstractSilicon-rich nitride (SRN) films that can exhibit an intense white-light emission were fabricated by atmospheric pressure chemical vapor deposition. SRN films were deposited on Si substrates using gaseous SiH(2)Cl(2) (DCS) and NH(3) as the source materials for Si and N, respectively. The deposition temperature was kept at 850 degrees C, and H(2) was used as the carrier gas with its flow rate modulated to maintain chamber pressure at 1 atm during the deposition. The optical properties of films obtained at various deposition times from 15 to 60 min were examined by photoluminescence (PL) measurement. An intense luminescence band (1.5-3.5 eV) was observed by the naked eye for all as-deposited samples. Besides, time-resolved PL exhibited a short radiative lifetime of about 1 ns for SRN films. Moreover, high resolution plan-view transmission electron microscopy demonstrated the existence of Si dots in SRN films with the dot sizes ranging from 2 to 6 nm and a dot density of about 4 x 10(12)/cm(2). On the basis of the results obtained, we considered that the related luminescence mechanism for SRN films is connected to crystalline Si dots produced therein.en_US
dc.language.isoen_USen_US
dc.subjectSiN(x) filmsen_US
dc.subjectAP-HCVDen_US
dc.subjectSi-QDsen_US
dc.subjectHRTEMen_US
dc.titleFabrication of whitely luminescent silicon-rich nitride films by atmospheric pressure chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.4696en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue6en_US
dc.citation.spage4696en_US
dc.citation.epage4699en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000257260600067-
dc.citation.woscount1-
Appears in Collections:Articles


Files in This Item:

  1. 000257260600067.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.