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dc.contributor.author陳明哲en_US
dc.contributor.authorCHEN MING-JERen_US
dc.date.accessioned2014-12-13T10:36:56Z-
dc.date.available2014-12-13T10:36:56Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-061zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94268-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418227&docId=74195en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject類比積體電路zh_TW
dc.subject低功率zh_TW
dc.subject雙極接面電晶體zh_TW
dc.subject次臨限金氧半導體zh_TW
dc.subject雜訊量測zh_TW
dc.subject數位積體電路zh_TW
dc.subjectAnalog integrated circuiten_US
dc.subjectLow poweren_US
dc.subjectBipolar junction transistor (BJT)en_US
dc.subjectSubthreshold MOSen_US
dc.subjectNoise measurementen_US
dc.subjectDigital integrated circuiten_US
dc.title低功率低電壓數位及類比積體電路之晶片實現及設計法則(IV)zh_TW
dc.titleImplementation and Methodology for Low Power/Low Voltage Digital and Analog Integrated Circuits (IV)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程研究所zh_TW
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