Thin Film Silicon Solar Cell Fabricated at 100 degrees C by High Density Plasma for Flexible Photovoltaic Application

Abstract

Record fabrication temperature, 100 degrees C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200 degrees C (4.1% at 135 degrees C). (C) 2009 Optical Society of America