标题: On minimizing topography variation in multi-layer oxide CMP manufacturability
作者: Shui, Chi-Hui
Chen, Hung-Ming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公开日期: 2008
摘要: Due to advanced technology manufacturing variations, dummy metal insertion becomes the key, process of VLSI fabrication in reducing wafer-topography variation in Al-based and Cu-based [4] chemical mechanical polishing(CMP) processes. In this paper, we propose a faster and more effective approach to dealing with inter-layer dielectric (ILD) CMP issue, called Effective Model-based Dummy Insertion (EMDI). EMDI selects panels to insert dummy metal by effective CMP low pass filter model [8], and obtain feasible solutions with good quality based on minimized effective density. Compared with previous linear programming approach [10] that costs O(n(3)) (pale have n * n panels in chip layout), EMDI is quite fast in O(n log n) which is dominate by fast fourier transformation, same complexity as in [11]. Multi-layer dummy metal insertion is considered in our framework as well. The experiments on a real design show that our approach has outperformed the approach in [11], and is more efficient and effective in the smoothness of metal layers.
URI: http://hdl.handle.net/11536/135065
ISBN: 978-1-4244-1616-5
期刊: 2008 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAM
起始页: 39
结束页: +
显示于类别:Conferences Paper