Browsing by Author "Agarwal, Sanjay"

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Field-Emission Characteristics of Zinc Oxide Nanowires Using Low-Temperature Supercritical Carbon Dioxide Fluid Method
(2012-01-01)
Yang, Po-Yu
;
Agarwal, Sanjay
;
Cheng, Huang-Chung
;
材料科學與工程學系
;
電子工程學系及電子研究所
Single-crystalline ZnO nanowires (NWs) were directly grown on Zn/glass substrates by using a low-temperature (i.e., 40 degrees C) supercritical carbon dioxide (SCCO(2)) fluid method. The optical, physical, and field-emission (FE) characteristics of the SCCO(2)-synthesized ZnO nanostructures are systematically investigated. ZnO NWs exhibited the low turn-on field of 3.16 V/mu m at a current density of 10 mu A/cm(2) and a low threshold field of 4.38 V/mu m at a current density of 1 mA/cm(2). The current fluctuation of ZnO emitters was less than 8% at 5.3 V/mu m in 12 h. The excellent FE properties of SCCO(2)-synthesized ZnO emitters at low temperature make them a superior candidate for FE-based display devices.
Zinc Oxide Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method
(2011-04-01)
Cheng, Huang-Chung
;
Yang, Po-Yu
;
Wang, Jyh-Liang
;
Agarwal, Sanjay
;
Tsai, Wei-Chih
High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 degrees C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the high field-effect mobility of 9.07 cm(2)/V . s, low threshold voltage of 2.25 V, high on/off-current ratio above 10(6), superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.