Browsing by Author "Aoki, H"

Now showing 1 - 5 of 5

CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications
(2004)
Chang, TC
;
Tsai, TM
;
Liu, PT
;
Chen, CW
;
Yan, ST
The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O-2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O-2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O-2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality. (C) 2004 The Electrochemical Society.
CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
(2004-01-30)
Chang, TC
;
Tsai, TM
;
Liu, PT
;
Chen, CW
;
Yan, ST
In this article, we investigated the impact of chemical mechanical polishing (CMP) on an ultra low dielectric constant (ultra low-k) material Porous-Polysilazane (PPSZ) with slurries of metal polishing during interconnect manufacture process. Since the CMP processing of metals such as TaN and Cu are inevitable steps for interconnect fabrication, we have utilized two types of slurries (marked as TaN and Cu slurries) to evaluate their effects on the dielectric properties of PPSZ films. Electrical and material analyses have shown surface planarity and dielectric properties of PPSZ films will not be degraded during these metal CMP processes. This indicates that the ultra low-k PPSZ films are promising for inter-level dielectric (ILD) applications in ultra large-scale integrated circuits (ULSI) technology. (C) 2003 Elsevier B.V. All rights reserved.
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
(2004-01-30)
Chang, TC
;
Yan, ST
;
Liu, R
;
Lin, ZW
;
Aoki, H
In this paper, electrical characterization of low-k dielectric methyl-silsesquiazane (MSZ) is presented. Thermal stress and bias temperature stress (BTS) were utilized to evaluate the impact of Cu penetration on dielectric properties. In the investigation of thermal stress performed by furnace annealing, the leakage mechanism of Al- and Cu-gate MIS capacitors is competed by the decrease of the interfacial states between metal and dielectric and the increase of defects resulted from Cu penetration. Also, the leakage conduction mechanism at high electric field is deduced from Schottky emission in conjunction with space-charge-limited current conduction (SCLC) through BTS methods. (C) 2003 Elsevier B.V. All rights reserved.
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
(2004-11-22)
Chang, TC
;
Yan, ST
;
Liu, PT
;
Lin, ZW
;
Aoki, H
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
(2004-05-01)
Chang, TC
;
Tsai, TM
;
Liu, PT
;
Yan, ST
;
Chang, YC
In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O-2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate. of MSZ film with O-2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O-2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O-2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality. (C) 2004 American Vacuum Society.