Browsing by Author "Bae, Sang-Hoon"

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High-Efficiency Organic Tandem Solar Cells With Effective Transition Metal Chelates Interconnecting Layer
(2017-10-01)
Chang, Sheng-Yung
;
Lin, Yu-Che
;
Sun, Pengyu
;
Hsieh, Yao-Tsung
;
Meng, Lei
Organic tandem solar cells have two sub-cells vertically connected via a tunnel junction (or interconnecting layer, ICL), which the ICL plays a critical role of determining the performance of the tandem cell. In this manuscript, we report a new design of the ICL consisting of zirconium (IV) acetylacetonate (Zr-Acac) as the electron transport layer. The Zr-Acac has a suitable work function to pin the Fermi-level of the ICL and hence, can effectively behave as the charge recombination function for the tandem device. Comparing to the reference device consisting of ZnO ETL layer, the Zr-Acac ICL can effectively enhance the efficiency by 20%, from 8.4 to 10.1% power conversion efficiencies. More importantly, the Zr-Acac ETL layer functions effectively without thermal annealing, which not only simplifies the tandem solar cell processing, but also widens the front sub-cell material selection.
Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
(1970-01-01)
Aljarb, Areej
;
Fu, Jui-Han
;
Hsu, Chih-Chan
;
Chuu, Chih-Piao
;
Wan, Yi
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS(2)nanoribbons on beta-gallium (iii) oxide (beta-Ga2O3) (100) substrates. LDE MoS(2)nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 10(8)and an averaged room temperature electron mobility of 65 cm(2) V-1 s(-1). The MoS(2)nanoribbons can be readily transferred to arbitrary substrates while the underlying beta-Ga(2)O(3)can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe(2)nanoribbons and lateral heterostructures made of p-WSe(2)and n-MoS(2)nanoribbons for futuristic electronics applications. Aligned arrays of single-crystalline monolayer TMD nanoribbons with high aspect ratios, as well as their lateral heterostructures, are realized, with the growth directed by the ledges on the beta-Ga(2)O(3)substrate. This approach provides an epitaxy platform for advanced electronics applications of TMD nanoribbons.