Browsing by Author "Baraban, A. P."

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Mechanism of stress induced leakage current in Si3N4
(2019-07-01)
Gritsenko, V. A.
;
Gismatulin, A. A.
;
Baraban, A. P.
;
Chin, A.
;
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In this paper, the experimental current density versus electric field characteristics of Si3N4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si3N4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si3N4 before and after the induced stress at traps energies W-t = 1.6 eV and W-opt = 3.2 eV. The current leakage at different induced stresses in Si3N4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si3N4.