Browsing by Author "Borisevich, Albina Y."
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Item type:Item, Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z-contrast Imaging(2011-06-03) ;Chang, Hye Jung ;Kalinin, Sergei V. ;Morozovska, Anna N. ;Huijben, MarkChu, Ying-HaoDirect atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy (STEM) (a-STEM image, b-corresponding displacement profile) is combined with the Landau-Ginsburg-Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions.Item type:Item, Interface dipole between two metallic oxides caused by localized oxygen vacancies(2012-10-11) ;Borisevich, Albina Y. ;Lupini, Andrew R. ;He, Jun ;Eliseev, Eugene A.Morozovska, Anna N.Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here, we report a study of SrRuO3 and La0.7Sr0.3MnO3 interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy-loss spectroscopy, and density functional calculations. Cation displacements are observed at the interface, indicative of a dipolelike electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface La0.7Sr0.3MnO3 layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.Item type:Item, Ultrathin limit and dead-layer effects in local polarization switching of BiFeO3(2012-01-31) ;Maksymovych, Peter ;Huijben, Mark ;Pan, Minghu ;Jesse, StephenBalke, NinaUsing piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical contacts. It was found that the shape of electromechanical hysteresis loops is strongly influenced by an extrinsic dielectric gap, primarily through the suppressing effect of the depolarizing field on the spontaneous polarization in the ultrathin films. Furthermore, statistical analysis of the hysteresis loops has revealed lateral variation of the extrinsic dielectric gap with sub-10-nm resolution. Robust and reproducible ferroelectric properties of nanoscale BiFeO3 indicate its potential for nanoscale applications in information storage and spintronics.