Browsing by Author "Bowers, J. E."

Now showing 1 - 7 of 7

Forward bias operation of silicon photonic Mach Zehnder modulators for RF applications
(2017-09-18)
Chao, Rui Lin
;
Shi, Jin Wei
;
Jain, Aditya
;
Hirokawa, Takako
;
Khope, Akhilesh S. P.
In this paper, we demonstrate that forward bias (+ 0.9V) of a high-speed silicon (Si) optical Mach-Zehnder Modulator (MZM) increases the radio-frequency (RF) link gain by 30 dB when compared to reverse bias operation (-8V). RF applications require tunable, narrowband electro-optic conversion with high gain to mitigate noise of the optical receiver and realize high RF spur-free dynamic range. Compared to reverse bias, the forward bias gain rolls off more rapidly but offers higher RF link gain improvement of more than 13.2 dB at 20 GHz. Furthermore, forward bias is shown to result in comparable spurious-free dynamic range (SFDR: 104.5 dB. Hz(2/3)). We demonstrate through an analytical dc transfer curve the existence of simultaneous high gain and OIP3 and verify the theoretical results with measurement under forward bias at a bias point of around + 0.9 V. (C)2017 Optical Society of America
Forward Bias Optimization of a Silicon Photonic Modulator for Analog Application
(2017-01-01)
Jain, Aditya
;
Chao, Rui Lin
;
Shi, Jin Wei
;
Schow, Clint
;
Bowers, J. E.
Despite the high phase non-linearity of a Silicon Mach-Zehnder Modulator in forward bias, we demonstrate that high third order spur-free dynamic range similar to 102.8 dB. Hz(2/3) can be obtained by optimizing the D.C. bias operating point at 1 GHz.
Fully Integrated Photonic Microwave Tracking Generator on Heterogeneous III-V/Si Platform
(2017-01-01)
Chao, Rui-Lin
;
Liang, Linjun
;
Shi, Jin-Wei
;
Hulme, Jared
;
Kennedy, M. J.
Fully-integrated photonic microwave tracking generators are demonstrated for the first time. By sweeping the wavelength separation among two-locked DFBs and one tunable laser, a two-tone photo-generated RF signal with tunable difference in frequency can be generated. 2017 Optical Society of America
Fully Integrated Photonic Millimeter-Wave Tracking Generators on the Heterogeneous III-V/Si Platform
(2018-05-15)
Chao, Rui-Lin
;
Liang, Linjun
;
Shi, Jin-Wei
;
Komljenovic, Tin
;
Hulme, Jared
Fully integrated photonic microwave/millimeterwave (MMW) tracking generators, which include wavelength-tunable lasers, distributed feedback lasers, phase modulators, and high-speed photodiodes (PDs), are demonstrated on the heterogeneous integrated III-V-on-Si photonic platform. Two on-chip lasers are locked by an external optical phase-locked loop (OPLL), and the two-tone radio-frequency (RF) signals from the on-chip fast PDs can be photonically generated through the heterodyne-beating process between the wavelengthtunable laser and the OPLL output. Furthermore, the frequency spacing between such two-tone RF signals can be tracked by the oscillation frequency in the OPLL with a wide tunability (near dc to 10 GHz). Fast and truly continuous scanning of photo-generated MMW signals thus becomes feasible by simultaneously tuning the OPLL and the central wavelength of the tunable laser in the demonstrated photonic integrated circuit.
Heterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrate
(2016)
Hulme, Jared
;
Kennedy, M. J.
;
Chao, Rui-Lin
;
Komljenovic, Tin
;
Shi, Jin-Wei
we demonstrate InP based evanescently-coupled pi-n photodiodes heterogeneously integrated onto silicon-on insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).
High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations
(2016-01-01)
Chao, Rui-Lin
;
Wun, Jhih-Min
;
Wang, Yu-Wen
;
Chen, Yi-Han
;
Bowers, J. E.
By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.
Strong Enhancements in Output Power and High-Speed Data Transmission Performances by Using Parallel Oxide-Relief/Zn-Diffusion 850 nm VCSELs
(2016)
Chi, Kai-Lun
;
Chen, Xin-Nan
;
Chen, Jye-Hong
;
Bowers, J. E.
;
Yang, Ying-Jay
By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-to-optical bandwidth (similar to 25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.