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Browsing by Author "CHANG, Chun-Yen"

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    OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    (2011-04-21)
    CHANG, Edward Yi
    ;
    KUO, Chien-I
    ;
    CHANG, Chun-Yen
    Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.