Browsing by Author "CHANG, Edward Yi"

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Fully Cu-metallized III-V group compound semiconductor device with palladium/germanium/copper ohmic contact system
(2009-08-06)
CHANG, Edward Yi
;
Chen, Ke-Shian
The present invention discloses a fully Cu-metallized III-V group compound semiconductor device, wherein the fully Cu-metallized of a III-V group compound semiconductor device is realized via using an N-type gallium arsenide ohmic contact metal layer formed of a palladium/germanium/copper composite metal layer, a P-type gallium arsenide ohmic contact metal layer formed of a platinum/titanium/platinum/copper composite metal layer, and interconnect metals formed of a titanium/platinum/copper composite metal layer. Thereby, the fabrication cost of III-V group compound semiconductor devices can be greatly reduced, and the performance of III-V group compound semiconductor devices can be greatly promoted. Besides, the heat-dissipation effect can also be increased, and the electric impedance can also be reduced.
OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
(2011-04-21)
CHANG, Edward Yi
;
KUO, Chien-I
;
CHANG, Chun-Yen
Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.