Browsing by Author "CHANG, HC"

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CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILM
(1993-10-01)
WU, SL
;
LEE, CL
;
LEI, TF
;
CHANG, HC
;
電子工程學系及電子研究所
A high-performance shallow junction diode formed with a stacked-amorphous-silicon (SAS) film is presented. Since the boundaries of stacked silicon layers and the poly/mono silicon interface act as a diffusion barrier for implanted dopants, the junction depth of SAS emitter contacted diode is about 500 angstrom shallower than that of the as-deposited polysilicon (ADP) emitter contacted diode. The fabricated SAS emitter contacted diodes exhibited a very low reverse leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V) and a forward.ideality factor m almost-equal-to 1.001 over 7 decades on a log scale. The reverse I-V characteristics were found to be nearly independent of the reverse voltage from the room temperature to 200-degrees-C, and it was also found that the leakage current was due almost completely to the diffusion current. The plots of the diode leakage current versus the perimeter to area ratio showed that the periphery generation current only contributed a small portion to the total leakage. The processing temperature for the SAS emitter contacted p+-n diode can be as low as 600-degrees-C.
SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
(1995-11-01)
CHANG, HC
;
LIU, HW
;
SU, HP
;
HONG, G
;
奈米中心
High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.
SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
(1995-11-01)
CHANG, HC
;
LIU, HW
;
SU, HP
;
HONG, G
;
奈米中心
High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.