Browsing by Author "CHANG, JH"

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ANALYSIS OF A 2-DIMENSIONAL RADOME OF ARBITRARILY CURVED SURFACE
(1990-10-01)
CHANG, JH
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CHANG, KK
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交大名義發表
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電信工程研究所
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National Chiao Tung University
METALLIZATION OF ALUMINUM NITRIDE SUBSTRATES BY ELECTROLESS COPPER PLATING
(1993-06-01)
CHIOU, BS
;
CHANG, JH
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DUH, JG
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電控工程研究所
;
Institute of Electrical and Control Engineering
The metallization of AIN substrates by electroless Cu plating was investigated for as-received unpolished and mechanically polished AIN substrates. Four-percent NaOH aqueous solution was employed as the chemical etchant before plating to create sites for mechanical interlocking. For the unpolished substrates, the adhesion increased from 1.3 kg/MM2 for the sample with an average surface roughness of 0.2 mum to 2.3 kg/MM2 for those with an average surface roughness of 0.82 mum. Mechanical interlocking is suggested as the major cause for adhesion in the Cu-unpolished AIN system. The adhesion strength of Cu with respect to the mechanically polished AIN substrate increases to a value larger than 7.6 kg/mm2. This makes electroless Cu plating a good candidate for AIN metallization. Nevertheless, the mechanism that causes the increased adhesion strength for the mechanically polished case needs further investigation.
METALLURGICAL REACTIONS AT THE INTERFACE OF SN/PB SOLDER AND ELECTROLESS COPPER-PLATED ALN SUBSTRATE
(1995-08-01)
CHIOU, BS
;
CHANG, JH
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DUH, JG
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Intermetallic formation between electroless-plated copper and Sn/Pb solder is investigated. An interlayer is formed between copper and solder, and segregation of Pb-rich and Sn-rich phases are observed. X-ray diffraction and EDX analysis results suggest that the major intermetallic formed in the interlayer is Cu6Sn5. For the as-plated sample, the adhesion strength of Cu to the AIN substrate after 150 degrees C aging is affected by both the recrystallization and the creep of copper. For the soldered specimen, the presence of intermetallic compound causes cracks to propagate along the intermetallic/Cu interface and results in a decrease of the adhesion strength.
MORPHOLOGY AND ADHESION STRENGTH IN ELECTROLESS CU METALLIZED ALN SUBSTRATE
(1993-12-01)
CHANG, JH
;
DUH, JG
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CHIOU, BS
;
電控工程研究所
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Institute of Electrical and Control Engineering
The metallization of aluminum nitride substrates by electroless copper plating is investigated. The AIN substrate is etched by 4% NaOH to study the correlation between the adhesion strength and the surface roughness of etched AIN substrate. Both the as-received nonpolished and then polished AIN are employed herein. For the nonpolished substrate, the adhesion strength increases from 130 kg/cm2 for the sample with an average surface roughness of 0.2 mum to 230 kgf/cm2 for the one with an average surface roughness of 0.82 mum. For the polished substrate, the adhesion strength reaches 271 kg/cm2 with a surface roughness of 0.19 mum. Mechanical interlocking is the major cause for the adhesion strength between the Cu and AIN substrates. The polished substrate followed by etching could form fine cavities on the AIN surface, and the microetching effect results in a stronger mechanical interlocking, which increase the adhesion strength.
UNCERTAINTY ANALYSIS OF A COMPUTERIZED SEDIMENT TRANSPORT MODEL
(1992)
CHANG, JH
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TUNG, YK
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YANG, JC
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YEH, KC
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土木工程學系