Browsing by Author "CHANG CHIA-HUA"

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ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
(2012-02-02)
CHANG EDWARD YI
;
CHANG CHIA-HUA
;
LIN YUEH-CHIN
This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor.
HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
(2013-07-11)
CHANG EDWARD YI
;
CHANG CHIA-HUA
;
LIN YUEH-CHIN
;
CHEN YU KONG
;
LIU SHIH-CHIEN
A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.