Browsing by Author "CHANG Li"

Now showing 1 - 6 of 6

METHOD FOR GROWING ALUMINUM INDIUM NITRIDE FILMS ON SILICON SUBSTRATE
(2015-08-20)
CHANG Li
;
CHEN Jr-Yu
;
CHEN Wei-Chun
;
LIN Pei-Yin
A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced.
METHOD FOR GROWING EPITAXIAL DIAMOND
(2014-05-22)
CHANG Li
;
WU Ping-Hsun
;
CHIU Kun-An
A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.
METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES
(2015-01-01)
CHANG Li
;
HO Yen-Teng
The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.
METHOD OF GROWING DIAMOND THIN FILM
(2014-07-31)
CHANG Li
;
CHEN Yu-Chang
;
CHEN Jr-Yu
The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.
METHOD OF NUCLEATING THE GROWTH A DIAMOND FILM AND A DIAMOND FILM NUCLEATED THEREOF
(2014-05-01)
CHANG Li
;
CHEN Yi-Chun
A method of nucleating the growth a diamond film comprises the following steps. First, a substrate is provided upon which the diamond film is to be nucleated. A diamondoid is then dissolved in an adhesive solvent to form a mixing solution. The substrate is inserted into the mixing solution to let the diamondoid attach to the substrate through the adhesive solvent. A diamond film nucleated by the abovementioned method is also disclosed in the present invention.
Non-polar plane of wurtzite structure material
(2013-09-19)
CHANG Li
;
HO Yen-Teng
The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.