Browsing by Author "CHANG Yi"

Now showing 1 - 6 of 6

COMMUNICATION SYSTEM BETWEEN ELECTRIC BIKES AND COMMUNICATION METHOD THEREOF
(2015-04-30)
CHANG Yi
;
CHIENG Wei-Hua
;
JENG Shyr-Long
;
CHENG Stone
;
HSU Fu-Jen
The present invention provides a communication system between electric bikes and communication method thereof. The communication system comprises a plurality of electric bikes. Each of the electric bikes comprises a monitor module and a portable electric device, wherein the portable device further comprises a storing unit and a WiFi module. The monitor module is configured to monitor the status of the electric bike to generate a plurality of monitor information. When a temporary network is formed between the electric bikes, the electric bikes transmit the monitor information each other through the temporary network and each of the electric bikes stores the received monitor information.
Enhanced GaN Transistor and the Forming Method Thereof
(2014-11-27)
CHANG Yi
;
LIN Yueh-Chin
;
WANG Huan-Chung
An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.
FLOW CONTROL DEVICE AND THE METHOD FOR CONTROLLING THE FLOW THEREOF
(2015-04-30)
CHIENG Wei-Hua
;
CHANG Yi
;
JENG Shyr-Long
;
WANG Chia-Chuan
;
SHIH Ching-Wei
The flow control device is provided and the method for controlling the flow. A flow control device comprises: a body including a first end, opposite second end, a first flow channel and a second flow channel, a plug and a laminar flow layer accommodated in the second flow channel; a telescopic device accommodated the length of the telescopic device is adjustable, so as to control the flow of fluid flowing through the opening area in the body.
GaN-containing semiconductor structure
(2015-04-16)
CHANG Yi
;
WONG Yuen Yee
;
HSIEH Chi Feng
A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.
GATE STRUCTURE
(2015-08-20)
CHANG Yi
;
KUO Chien-I
;
HSU Heng-Tung
The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.
Semiconductor Device
(2012-12-13)
CHANG Yi
;
CHANG Chia-Hua
;
LIN Yueh-Chin
;
CHEN Yu-Kong
;
SHIE Ting-En
A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.