Browsing by Author "CHEN, SH"

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A PROSODIC MODEL OF MANDARIN SPEECH AND ITS APPLICATION TO PITCH LEVEL GENERATION FOR TEXT-TO-SPEECH
(1995)
HWANG, SH
;
CHEN, SH
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電信工程研究所
;
Institute of Communications Engineering
A SEGMENT-BASED SPEECH RECOGNITION SYSTEM FOR ISOLATED MANDARINE SYLLABLES
(1993)
CHANG, SG
;
CHEN, SH
;
電信工程研究所
;
Institute of Communications Engineering
A STATISTICAL-MODEL BASED FUNDAMENTAL-FREQUENCY SYNTHESIZER FOR MANDARINE SPEECH
(1992-07-01)
CHEN, SH
;
CHANG, S
;
LEE, SM
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電信工程研究所
;
電信研究中心
A novel method based on a statistical model for the fundamental-frequency (F0) synthesis in Mandarin text-to-speech is proposed. Specifically, a statistical model is employed to determine the relationship between F0 contour patterns of syllables and linguistic features representing the context. Parameters of the model were empirically estimated from a large training set of sentential utterances. Phonologic rules are then automatically deduced through the training process and implicitly memorized in the model. In the synthesis process, contextual features are extracted from a given input text, and the best estimates of F0 contour patterns of syllable are then found by a Viterbi algorithm using the well-trained model. This method can be regarded as employing a stochastic grammar to reduce the number of candidates of F0 contour pattern at each decision point of synthesis. Although linguistic features on various levels of input text can be incorporated into the model, only some relevant contextual features extracted from neighboring syllables were used in this study. Performance of this method was examined by simulation using a database composed of nine repetitions of 112 declarative sentential utterances of the same text, all spoken by a single speaker. By closely examining the well-trained model, some evidence was found to show that the declination effect as well as several sandhi rules are implicitly contained in the model. Experimental results show that 77.56% of synthesized F0 contours coincide with the VQ-quantized counterpart of the original natural speech. Naturalness of the synthesized speech was confirmed by an informal listening test.
ADDITION POLYMERIZATION IN A NEMATIC MEDIUM - EFFECTS OF AN ANISOTROPIC SOLVENT IN A KINETIC GELATION MODEL
(1995-10-01)
CHEN, WJ
;
CHEN, SH
;
光電工程研究所
;
Institute of EO Enginerring
A kinetic gelation model with rodlike anisotropic solvent is used to study the addition polymerization in a nematic medium. The structure of the polymer network is extended in the direction of the director of anisotropic solvent, since the order parameter of the anisotropic solvent is not zero. Finite-size scalings show that there is no change in the universal behavior of the sol-gel transition in the presence of the anisotropic solvent.
AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
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TSAI, MH
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CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
;
TSAI, MH
;
CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
APPLICATION OF A GENERALIZED PROBABILISTIC DESCENT METHOD TO RECURRENT NEURAL NETWORK BASED SPEECH RECOGNITION
(1994)
CHEN, SH
;
LIAO, YF
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CHEN, WY
;
交大名義發表
;
National Chiao Tung University
AQUEOUS PHOTOLITHOGRAPHIC ETCHING OF TGS
(1983)
WANG, DC
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SHIE, JS
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CHEN, SH
;
交大名義發表
;
光電工程學系
ASYMMETRIC MODULATION INDEXES IN FULL PARTIAL RESPONSE MULTI-H PHASE-CODED MODULATIONS WITH DIFFERENT PHASE PULSE FUNCTIONS
(1992-10-01)
LEE, LS
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HWANG, HK
;
CHEN, SH
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傳播研究所
;
Institute of Communication Studies
A new concept of asymmetric modulation indices has recently been proposed and applied to full response multi-H phase-coded modulations (MHPM) with linear phase pulse function, and improved error probability performance has been found. In the paper, the above concept is extended in two directions. The partial response performance is analysed and compared with full response systems, and the effect of different phase pulse functions on bandwidth/power efficiency is discussed in detail. It is shown that not only is improved performance possible, but also a full range of design trade-offs, among bandwidth and power efficiencies and complexity, are available for system optimisation.
AUTORADIOGRAPHIC STUDY OF PROSTAGLANDIN-E1 AND-OR ITS METABOLITES IN MOUSE UTERUS TISSUE
(1976-01-01)
CHEN, SH
;
電子物理學系
;
Department of Electrophysics
BANDWIDTH-POWER PERFORMANCE ANALYSIS OF MULTI-H PHASE-CODED MODULATIONS WITH ASYMMETRIC MODULATION INDEXES
(1989-05-25)
HWANG, HK
;
LEE, LS
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CHEN, SH
;
傳播研究所
;
電控工程研究所
BORON-DOPED DIAMOND FILMS USING TRIMETHYLBORATE AS A DOPANT SOURCE IN METHANE CARBON-DIOXIDE GAS-MIXTURES
(1994-04-01)
CHEN, CF
;
CHEN, SH
;
HONG, TM
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WANG, TC
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材料科學與工程學系
The effects of boron concentration in the gas phase on the morphological features and cathodoluminescence (CL) of polycrystalline diamond films were investigated. The diamond films were prepared on p-type Si(100) substrates by microwave plasma chemical vapour deposition. Trimethylborate vapour was introduced to the CH4-CO2 gas mixture as a dopant source. Secondary ion mass spectroscopy (SIMS), Raman and CL spectroscopy and scanning electron microscopy analysis were performed on the films. The depth profile of SIMS showed that boron was uniformly doped into the diamond film even at a depth of 6 mum. Boron was found to have a significant effect on both the morphology and cathodoluminescence of the deposited films. The surface morphology changed from well-defined facets to ball-like features with increasing gas phase dopant concentration. To obtain doped diamond films of good quality, it is necessary to lower the carbon concentration by decreasing the flow rate of CH4 during the deposition process. The cathodoluminescence of diamond films was investigated in the range 1.8-4.0 eV. The emission peak intensity of CL spectra at 2.3-2.4 eV was found to increase with increasing dopant concentration in the gas phase. The luminescence is explained by donor-acceptor pair recombination, where the acceptor is substitutional boron. This result indicates that the boron atoms can be successfully doped into substitutional sites of the diamond structure.
CHARACTERIZATION OF BORON-DOPED DIAMOND FILMS USING (CH4-CO2) GAS-MIXTURES WITH B(OCH3)3 AS A DOPANT SOURCE BY MPCVD
(1994-08-15)
CHEN, CF
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CHEN, SH
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HONG, TM
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WANG, TC
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交大名義發表
Boron-doped diamond films were fabricated on p-type and n-type Si(100) substrates by microwave plasma chemical vapour deposition. Tri-methylborate vapour was introduced to the CH4-CO2 gas mixtures as a dopant source. Secondary ion mass spectroscopy (SIMS), Raman and CL spectroscopy, and scanning electron microscopy analysis were performed on the films. The depth profile of SIMS showed that boron was uniformly doped into the diamond film, even at a depth of 6 mum. Boron was found to have a significant effect on both the morphology and the cathodoluminescence of the deposited films. The surface morphology changed from well-defined facets to ball-like features with increasing gas phase dopant concentration. To obtain doped diamond films of good quality, it is necessary to lower the carbon concentration by decreasing the flow rate of CH4 during the deposition process. The cathodoluminescence of diamond films was investigated in the range 1.8-4.0 eV. The emission peak intensity of CL spectra at 2.3 2.4 eV was found to increase with increasing dopant concentration in the gas phase. The luminescence is explained by donor acceptor pair recombination, where the acceptor is substitutional boron. This result indicates that boron atoms can be successfully doped into substitutional sites of the diamond structure.
CHARACTERIZATION OF DIAMOND FILMS DEPOSITED USING C3H6OX-H2 GAS-MIXTURES
(1993-04-13)
CHEN, CF
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CHEN, SH
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HONG, TM
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WU, SH
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交大名義發表
Diamond films were synthesized using the vapour of hydrocarbon liquids,, such as C3H6O (propylene oxide), C3H6O2 (1,3-dioxolane) and C3H6O3 (dimethylcarbonate), diluted by a large amount of hydrogen as gas mixtures. The surface morphologies of the diamond films still possessed well-defined facets when the hydrocarbon concentrations were 1.2 vol.%, 0.5 vol.% and 0.3 vol.% for C3H6O3-H-2, C3H6O2-H-2 and C3H6O-H-2 gas mixtures respectively. Diamonds of good quality, according to Raman measurements, were obtained using C3H6O3-H-2, C3H6O2-H-2 and C3H6O-H-2 gas mixtures. Optical emission spectroscopy was used to examine the species in the plasma during the process of diamond growth. Our results show that the characteristics of diamond growth were related to the oxygen content, i.e. O-to-C ratios, of C3H6Ox (x = 1, 2, 3). We found that the diamond formation region could be extended to higher hydrocarbon concentrations for C3H6O3-H-2 mixtures than for C3H6O-H2 and C3H6O2-H2 MixtUreS because of the larger amounts of atomic hydrogen and oxygen-containing species, such as atomic oxygen, oxygen molecules and OH radicals, in the plasma of the C3H6O3-H-2 mixture. Obviously, there was a higher etching rate, resulting in a diamond formation region with a lower growth rate for the C3H6O3-H-2 mixture.
CHEMICAL POTENTIAL AND MAGNETIC-SUSCEPTIBILITY OF A 2-SITE HUBBARD HAMILTONIAN WITH ARBITRARY ELECTRON-DENSITY
(1976-01-01)
CHENG, YC
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CHEN, SH
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電子物理學系
;
Department of Electrophysics
CONFIGURATION TRANSITION OF A CLOSED-CYLINDER NEMATIC LIQUID-CRYSTAL IN AN EXTERNAL ELECTRIC-FIELD
(1994-03-15)
CHEN, SH
;
WEI, JG
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交大名義發表
;
光電工程學系
;
National Chiao Tung University
This study reports on the director-field configurations of a closed-cylinder nematic liquid crystal with negative dielectric anisotropy in an external electric field. Raising the applied voltage causes the director orientation with a volume point defect to be transformed from a normal to a twisted configuration. The voltage at which the configuration is transformed depends on the aspect ratio of the cylinder.
CRUCIAL INFLUENCE OF THE TWIST DEFORMATION ON DEGENERATE 4-WAVE MIXING PROCESS IN HOMEOTROPICALLY ALIGNED NEMATIC LIQUID-CRYSTALS
(1989-10-30)
CHEN, SH
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KUO, CL
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交大名義發表
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光電工程學系
;
National Chiao Tung University
DIRECTOR-CONFIGURATION DIAGRAM FOR A CLOSED-CYLINDER NEMATIC LIQUID-CRYSTAL
(1992-03-01)
LIANG, BJ
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CHEN, SH
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交大名義發表
;
光電工程學系
;
National Chiao Tung University
This study reports that the director configuration diagram of a closed cylinder of nematic liquid crystal (CC NLC) with normal orientation at the walls may contain four kinds of stable director configurations. Sample cells were prepared by treating all walls of a closed cylindrical cavity with DMOAP (N,N-dimethyl-N-octadecyl-3-aminopropyltrimethoxysilyl-chloride) and then filling with NLC 5CB. The optical patterns of the CC NLCs were observed between crossed linear polarizers. A theory explaining these observations was developed by calculating the spatial distribution of the nematic director fields. The stable director configurations depend not only on the ratio of the splay and bend Frank elastic constant (K11/K33), but also on the aspect ratio of the cylinder. In general, the occurrence of a transformation between the radial and the hyperbolic type is determined by a critical transformation ratio K11/K33; there is also a critical aspect ratio remarking the transformation between the point and the ring structure. The calculations predict that the characteristic lengths of both the radial and the hyperbolic ring structure are nearly invariant with respect to K11/K33 and the aspect ratio of the cylinder.
DISCONTINUOUS RADIAL TO AXIAL TRANSFORMATION OF DIRECTOR CONFIGURATION IN A CYLINDRICAL NEMATIC CAVITY
(1991-11-15)
LIANG, BJ
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CHEN, SH
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交大名義發表
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電子物理學系
;
National Chiao Tung University
The optical patterns of a nematic liquid crystal confined to a closed cylindrical cavity are observed through crossed polarizers. This optical pattern exhibits an annular phenomenon when the radius of the cylinder is varied. The minor dependence of the width of the bright annulus on the radius of the cavity is presented. The formation of the disclination ring is numerically studied and found to be the physical mechanism of the annular phenomenon. The characteristic length defined as the distance from the ring defect to the laterally cylindrical boundary is nearly invariant and is characterized to be the width of the bright annulus.
DIVERGENCE OF CHOLESTERIC PITCH NEAR THE SMECTIC-A TRANSITION IN SOME CHOLESTERYL NONANOATE BINARY-MIXTURES
(1982)
CHEN, SH
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WU, JJ
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電子物理學系
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Department of Electrophysics