Browsing by Author "CHEN, SS"

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MOLECULAR-BEAM EPITAXY REGROWTH USING A THIN IN LAYER FOR SURFACE PASSIVATION
(1995-05-08)
PENG, CK
;
TU, SL
;
CHEN, SS
;
LIN, CC
;
材料科學與工程學系
RECESSED-GATE ALGAAS/INGAAS/GAAS PSEUDORMORPHIC HEMT WITH SI-PLANAR-DOPED ETCH-STOP LAYER
(1995-03-30)
LAN, WH
;
LIN, WJ
;
PENG, CK
;
CHEN, SS
;
TU, SL
An improved slot etch technique based on an Si planar doped laver has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g(m) with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices.