Browsing by Author "CHENG, JY"

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A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
(1995-10-01)
CHENG, JY
;
LEI, TF
;
CHAO, TS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The planarization of trench isolation refilled by deposition oi polysilicon was investigated. Results show that the planarization by RIE etching has poor surface planarity. On the other hand, an excellent surface planarity can be achieved by the CMP process resulting from the high etching selectivity of polysilicon to nitride. This simple process provides a very promising candidate for trench isolation.
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
(1995-10-01)
CHENG, JY
;
LEI, TF
;
CHAO, TS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The planarization of trench isolation refilled by deposition oi polysilicon was investigated. Results show that the planarization by RIE etching has poor surface planarity. On the other hand, an excellent surface planarity can be achieved by the CMP process resulting from the high etching selectivity of polysilicon to nitride. This simple process provides a very promising candidate for trench isolation.
CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE GROWTH-KINETICS OF HEXAGONAL MOSI2 ON (001)SI
(1987-03-15)
CHENG, JY
;
CHENG, HC
;
CHEN, LJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE
(1995-02-16)
CHAO, TS
;
CHENG, JY
;
LEI, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In the Letter new N2O buffer oxide was used to replace the conventional dry oxide for LOGOS isolation. This new structure can result in a shorter bird's beak than the conventional structure without adding extra steps and inducing the defect in silicon substrate.
THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION
(1993-06-01)
YEH, CF
;
CHENG, JY
;
LU, JH
;
交大名義發表
;
電控工程研究所
Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al2O3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al2O3 is developed by anodic oxidation method. The electrical characteristics of Al2O3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al2O3 has been developed. In addition, the double-layer of Al2O3/SiN is also shown to be sufficiently protective against hillock formation.