Browsing by Author "CHIN, SY"

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A 10-B 225-MHZ CMOS DIGITAL-TO-ANALOG CONVERTER (DAC) WITH THRESHOLD-VOLTAGE COMPENSATED CURRENT SOURCES
(1994-11-01)
CHIN, SY
;
WU, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper describes a 10-b high-speed COMS DAC fabricated by 0.8-mu m double-poly double-metal CMOS technology. In the DAC, a new current source called the threshold-voltage compensated current source is used in the two-stage current array to reduce the linearity error caused by inevitable current variations of the current sources, In the two-stage weighted current array, only 32 master and 32 slave unit current sources are required. Thus silicon area and stray capacitance can be reduced significantly. Experimental results show that a conversion rate of 125 MHz is achievable with differential and integral linearity errors of 0.21 LSB and 0.23 LSB, respectively. The power consumption is 150 mW for a single 5-V power supply. The rise/fall time is 3 ns and the full-scale settling time to +/- 1/2 LSB is within 8 ns. The chip area is 1.8 mm x 1.0 mm.
AN ALGORITHMIC ANALOG-TO-DIGITAL CONVERTER WITH LOW RATIO-SENSITIVITY AND GAIN-SENSITIVITY AND 4N-CLOCK CONVERSION CYCLE
(1994)
CHIN, SY
;
WU, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
HIGH-PRECISION CURVATURE-COMPENSATED CMOS BAND-GAP VOLTAGE AND CURRENT REFERENCES
(1992-09-01)
WU, CY
;
CHIN, SY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Precise CMOS band-gap voltage and current references which uses the difference of MOS source-gate voltages to perform efficient curvature compensation are proposed and analyzed. Applying the developed design strategies, band-gap voltage references (BVR) with a temperature drift below 10 ppm/degrees-C and a power-supply drift below 10 ppm/V can be realized. For band-gap current references, both drifts can be under 15 ppm. Experimental BVR chip shows an average drift of 5.5 ppm/degrees-C from -60-degrees-C to 150-degrees-C and 25 muV/V for supply voltages from 5 to 15 V at 25-degrees-C. Due to the use of the novel curvature-compensation technique, the circuit structure of the proposed references is simple and both chip area and power consumption are small.