Browsing by Author "CHIN, TC"

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ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD
(1991-03-01)
LIU, DG
;
CHIN, TC
;
LEE, CP
;
HWANG, HL
;
電控工程研究所
Three HEMT structures, the single heterostructure HEMT (SH-HEMT), the quantum well HEMT (QW-HEMT) and the delta-doped HEMT (delta-HEMT) were analyzed by solving the Schroedinger equation and Poisson equation self-consistently. The potential and the carrier distributions as well as the charge controlled by gate bias were calculated for different structural parameters. Parallel conduction in AlGaAs, which is severe for SH-HEMTs, is greatly reduced in QW-HEMT and delta-HEMT structures. The effect of layer parameters such as spacer layer thickness and quantum-well width on device performance has been studied. SH-HEMT and QW-HEMT have been fabricated for the confirmation of our analysis.