Browsing by Author "CHOU, CT"

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A GLOBAL APPROACH FOR NONLINEAR MIXED DISCRETE PROGRAMMING IN DESIGN OPTIMIZATION
(1994)
LI, HL
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CHOU, CT
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交大名義發表
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資訊管理與財務金融系註：原資管所+財金所
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National Chiao Tung University
Most current nonlinear mixed discrete programs can only find locally optimal solutions. This paper proposes an optimization method to find the global solution of a nonlinear mixed discrete program. Based on the fact that: ''For a discrete variable x(i), iff x(i) is-an-element-of {k1, k2, . . ., k(m)} then (x(i) - k1) (x(i) - k2) ... (x(i)k(m)) = 0'', the original mixed discrete program is transformed into a penalty optimization program with continuous variables. This penalty optimization program is then solved to find a local optimum. Utilizing the Multi-Level Single Linkage technique, enough starting points are systematically generated to search for most local optima within the feasible region. A global optimum is then found at a prespecified sufficiently high confidence level such as 99.5%. Some examples of design optimization in literature are tested, which demonstrate that the proposed method is superior to current methods for finding the global optimum.
BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
(1995-11-13)
CHEN, LP
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CHOU, CT
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HUANG, GW
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TSAI, WC
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CHANG, CY
0.1% B2H6 diluted in hydrogen is used as the p-type dopant gas in Si1-xGex grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The boron concentration is evaluated by secondary ion mass spectrometry (SIMS). The boron concentration of Si1-xGex increases with the increase of the GeH4 flow rate, that is, Ge fraction, by keeping Si2H6 and B2H6 how rates constant. The result may be due to the increase of the vacant surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge fraction epilayer is grown. (C) 1995 American Institute of Physics.