Browsing by Author "CHUANG, HF"

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AN ELECTRICAL METHOD TO CHARACTERIZE THERMAL-REACTIONS OF PD/GAAS AND NI/GAAS CONTACTS
(1995-06-01)
CHUANG, HF
;
LEE, CP
;
LIU, DC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Capacitance-voltage (C-V) and current-voltage (I-V) measurements were used to study the thermal reaction of Pd/GaAs contacts and Ni/GaAs contacts. The thickness of GaAs consumed by the metal/GaAs reaction during annealing was calculated from C-V analyses and I-V analyses. For annealing temperatures below 350 degrees C, the Schottky characteristics of the diodes were good but the electrical junction moves into the GaAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd and Ni in GaAs at 300 degrees C were estimated both to be around 1.2 x 10(-14) cm(2)/s.
MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS
(1991-03-01)
CHUANG, HF
;
LEE, CP
;
WU, SC
;
電控工程研究所
;
Institute of Electrical and Control Engineering
The thermal stability of MoSi(x) Schottky contacts to GaAs has been studied. The contacts were analysed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), sheet resistance, and current-voltage measurements. We have studied MoSi(x) with the compositions x = 0, 0.3, 0.6, 1, and 2. The films were annealed at various temperatures up to 850-degrees-C. The thermal stability of the films is found to be x-dependent. The best composition for thermally stable Schottky contacts is Mo5Si3. Good Schottky characteristics were retained with annealing temperatures up to 850-degrees-C for 30 min.