Browsing by Author "CHUANG, SH"

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A NOVEL SYNTHESIS OF ORGANOIMIDO COMPLEX BY TRANSAMINATION REACTION - X-RAY CRYSTAL-STRUCTURE OF BIS-(ISOPROPYLIMIDO) COMPLEX OF TUNGSTEN(VI), [W(MU-NPRI)(NPRI)(NHPRI)2]2
(1994-08-01)
CHIU, HT
;
CHUANG, SH
;
LEE, GH
;
PENG, SM
;
應用化學系
The bis(isopropylimido) complex [W(mu-NPri)(NPri) (NHPri)(2)](2) was synthesized by reacting W-2(NBu(i))(2)(NHBu(i))(2) with excess (PrNH2)-N-i. The complex, characterized by X-ray crystallography, is a dimer of distorted trigonal bipyramids sharing an edge defined by the unsymmetrical bridging imido ligands. Exchange between the bridging and the terminal imido ligands were observed on the NMR timescale, Delta G double dagger = 14.5+/-1.0 kcal mol(-1). An equilibration process is proposed to account for the fluxional behaviour.
DEPOSITION OF MOLYBDENUM CARBONITRIDE THIN-FILMS FROM MO(NBUT)2(NHBUT)2
(1994-07-01)
CHIU, HT
;
HO, WY
;
CHUANG, SH
;
交大名義發表
;
應用化學系
Mo(NBut)2(NHBut)2 is used as a single-source precursor to deposit thin films of cubic phase molybdenum carbonitride, MoC(x)N(y), (x: 0.2-0.55, y: 0.1-0.47), by chemical vapor deposition on silicon substrates. in general, the C/Mo ratios increased from 0.2 to 0.55 and the N/Mo ratios decreased from 0.47 to 0.1 with increasing the temperature of deposition from 773 to 923 K. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon atoms were incorporated through beta-methyl activation of the ligands.
GROWTH OF TERNARY SI1-X-YGEXCY THIN-FILMS FROM A SINGLE-SOURCE PRECURSOR, GE(SIME(3))(4)
(1995-09-01)
CHIU, HT
;
SHIE, SC
;
CHUANG, SH
;
交大名義發表
;
應用化學系
Ge(SiMe(3))(4) was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm(-1). X-ray photoelectron spectra of a typical thin film showed binding energies of Ge-3d, Si-2p, and C-1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of beta-SiC with Ge atoms replacing some Si atoms in the lattice.
GROWTH OF TERNARY SI1-X-YGEXCY THIN-FILMS FROM A SINGLE-SOURCE PRECURSOR, GE(SIME(3))(4)
(1995-09-01)
CHIU, HT
;
SHIE, SC
;
CHUANG, SH
;
應用化學系
;
Department of Applied Chemistry
Ge(SiMe(3))(4) was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm(-1). X-ray photoelectron spectra of a typical thin film showed binding energies of Ge-3d, Si-2p, and C-1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of beta-SiC with Ge atoms replacing some Si atoms in the lattice.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
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SUN, SC
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CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
SYNTHESES AND X-RAY CRYSTAL-STRUCTURES OF DICHLOROBIS(TERT-BUTYLIMIDO) COMPLEXES OF MOLYBDENUM(VI) - POTENTIAL PRECURSORS TO MOLYBDENUM NITRIDE AND MOLYBDENUM CARBONITRIDE
(1994-12-01)
CHIU, HT
;
CHANG, GB
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HO, WY
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CHUANG, SH
;
LEE, GH
The bistertbutylimido complexes [MoCl(mu L-Cl)(NBu(t))(2)(NH(2)Bu(t))](2), 1, and MoCl2(NBu(t))(2)(py)(2), 2 (py = pyridine), were prepared by reacting MoCl2(NBu(t))(2)(dme) (dme = dimethoxyethane) with excess Bu(t)NH(2) and pyridine, respectively. Their structures were determined by X-ray crystallography. 1 has a pseudo edge-shared bioctahedral geometry with two Cl ligands bridging the Mo centers unequally. Pertinent bond distances and angles for 1, Mo = NBu(bent)(t) = 1.737(3) Angstrom, angle Mo = N-CMe(3) = 154.0(2)degrees; Mo = NBu(linear)(t) = 1.725(3) Angstrom, angle Mo = N-CMe(3) = 172.4(2)degrees; Mo-Bu(t)NH(2) = 2.233(2) Angstrom; Mo=Cl-bridging = 2.575(1) and 2.835(1) Angstrom, and Mo-Cl-leminal = 2.428(1) Angstrom. Crystal data for 1: triclinic, space group P (1) over bar, a = 8.897(4) Angstrom, b = 10.518(3) Angstrom, c = 10.663(3) Angstrom, alpha = 107.68(2)degrees, beta = 98.03(3)Angstrom, gamma = 99.26(3)degrees, V = 919.3(5) Angstrom(3), Z = II D-c = 1.381 g/mL. 2 is mononuclear with a distorted octahedral geometry with two trans Cl ligands, two cis-oriented Bu(t)N = ligands, and two py ligands trans to the imido groups. Pertinent averaged bond distances and angles for 2, Mo = NBu(bent)(t) = 1.736(4) Angstrom, angle Mo = N-CMe, = 161.8(4)degrees; Mo = NBu(linear)(t) = 1.705(5) Angstrom, angle Mo = N-CMe(3) = 173.4(4)degrees; Mo-N(py)= 2.44(1), Mo-Cl = 2.421(3) Angstrom Crystal data for 2: orthorhombic, space group Pna2(1) a = 16.860(2) Angstrom, b = 8.920(3) Angstrom, c = 15.120(3) Angstrom, V = 2274.1(9) Angstrom(3), Z = 4, D-c = 1.362 g/mL. A potential application of 2 as a single-source precursor to grow molybdenum nitride and molybdenum carbonitride thin films by low pressure chemical vapor deposition (LPCVD) was explored. Cubic phase thin films (a(thin film) = 4.16 - 4.20 Angstrom) were grown at temperatures between 450 degrees C and 650 degrees C with hydrogen as carrier gas. At 450 degrees C, thin films of molybdenum nitride were obtained. With temperature of deposition increased from 450 degrees C to 650 degrees C, the ratio C/Mo increased from 0.03 to 0.5 whereas the ratio C/Mo decreased from 0.7 to 0.3. Thus, thin films of molybdenum carbonitride were deposited at 650 degrees C.
TUNGSTEN NITRIDE THIN-FILMS PREPARED BY MOCVD
(1993-06-01)
CHIU, HT
;
CHUANG, SH
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Polycrystalline tungsten nitride thin films were grown by low pressure metallo-organic chemical vapor deposition (MOCVD) using (tBuN)2W(NHtBu)2 as the single-source precursor. Deposition of uniform thin films on glass and silicon substrates was carried out at temperatures 723-923 K in a cold-wall reactor, while the precursor was vaporized at 333-363 K. The growth rates were 2-10 nm/min depending on the condition employed. Bulk elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WN(x) (x = 0.7-1.8). The N/W ratio decreased with increasing temperature of deposition. X-ray diffraction (XRD) studies showed that the films have cubic structures with the lattice parameter a = 0.414-0.418 nm. The lattice parameter decreased with decreasing N/W ratio. Stoichiometric WN thin films showed an average lattice parameter a of 0.4154 nm. X-ray photoelectron spectroscopy (XPS) showed that binding energies of the W4f7/2, W4f5/2, and N1s electrons were 33.0, 35.0, and 397.3 eV, respectively. Elemental distribution within the films, studied by secondary ion mass spectroscopy (SIMS) and Auger spectroscopy depth profilings, was uniform. The SIMS depth profiling also indicated that C and 0 concentrations were low in the film. Volatile products trapped at 77 K were analyzed by gas chromatography-mass spectroscopy (GC-MS) and nuclear magnetic resonance (NMR). Isobutylene, acetonitrile, hydrogen cyanide, and ammonia were detected in the condensable mixtures. Possible reaction pathways were proposed to speculate the origin of these molecules.