Browsing by Author "CHUANG Ting-Wei"

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Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
(2014-06-05)
LIN Yueh-Chin
;
CHANG Edward Yi
;
CHUANG Ting-Wei
The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2).