Browsing by Author "CHUNG, LL"
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Item type:Item, CONTACT RESISTIVITIES OF AL AND TI ON SI MEASURED BY A SELF-ALIGNED VERTICAL KELVIN TEST RESISTOR STRUCTURE(1989-11-01) ;WEN, LY ;TAN, FL ;CHUNG, LL ;交大名義發表電控工程研究所Item type:Item, CURRENT MULTIPLICATION IN MIS STRUCTURES(1984) ;CHEIN, WJ ;CHUNG, LL ;TAN, FL ;交大名義發表電控工程研究所Item type:Item, ELLIPSOMETRY STUDY ON REFRACTIVE-INDEX PROFILES OF THE SIO2/SI3N4/SIO2/SI STRUCTURE(1993-02-15) ;TIEN, SC ;CHUNG, LL ;TAN, FL ;電子工程學系及電子研究所奈米中心In this work, the refractive index profiles of SiO2/Si3N4/SiO2/silicon (ONO) Structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O2 ambient at the temperature range of 900-1050-degrees-C for different lengths of time. It was found that for a nitride film thickness less than 250 angstrom, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.Item type:Item, SPECIFIC CONTACT RESISTIVITY MEASUREMENT BY A VERTICAL KELVIN TEST STRUCTURE(1987-06-01) ;TAN, FL ;LEU, LY ;CHUNG, LL ;電子工程學系及電子研究所電控工程研究所